Review Article
Open Access
Thermodynamic and Gas Sensing Properties of Cu2+ Doped SnO2Thin Films
M.C. Rao1*, K. Ravindranadh1, T. Srikumar1, G.V. Ramana2, K.L. Sirisha2, T. Rosemary3, M. David Raju4, M. Manoranjani4 and G. Nagarjuna5
1Department of Physics, Andhra Loyola College, Vijayawada - 520008, India
2Department of Chemistry, Andhra Loyola College, Vijayawada - 520008, India
3Department of Botany, Andhra Loyola College, Vijayawada - 520008, India
4 PG Department of Chemistry, P.B. Siddhartha College of Arts & Science, Vijayawada - 520010, India
5Department of Chemistry, S. R. R. & C. V. R. Govt. College, Vijayawada-520 005, India
M.C. Rao et al /Int.J. Chemical Concepts. 2018,4(1),pp 12-17.
Abstract
SnO2 is a special oxide material because it has a low electrical resistance with high optical
transparency in the visible range. SnO2 sensor is invariably anion deficient and oxygen vacancies are
mainly responsible for making available free electrons for the conduction process. Cu2+ doped SnO2 thin
films were prepared by using chemical spray pyrolysis method. The prepared thin films were characterized
by FTIR, electrical, gas sensing and thermo emf. The bands at the low wave numbers 500-1000 cm−1 could
be attributed to SnO2. The peaks at 677, 786 and 965 cm−1 were assigned to O–Sn–O, Sn–O–Sn stretching
vibrations and lattice vibrations, while the peaks at 569 and 864 cm−1 were due to Sn–OH bonds of the
SnO2 crystalline phase. The thermo emf of Cu2+ doped SnO2 thin films increased with the increasing of
temperature. At low temperatures the Seebeck coefficient is observed to be high and the Seebeck
coefficient decreases with increasing of temperature. The large values of thermoelectric power of Cu2+
doped SnO2 thin films are typical of semiconductor behavior.
Keywords
SnO2, Thin films, Spray pyrolysis, FTIR, Thermo emf, Gas Sensing and Electrical.
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