Review Article
Open Access
Electrical and Gas Sensing Properties of Fe3+ Doped Tin Oxide Thin Films
M.C. Rao1*, K. Ravindranadh1, A. Kasturi2, P. Srinivasa Rao3, P. Mohan Babu4, B. Yasoda5, B. Radhakrishna6 and G. Sivaramaiah7
1Department of Physics, Andhra Loyola College, Vijayawada - 520008, India
2Department of Physics, Maris Stella College, Vijayawada - 520008, India
3Department of Physics, S.V.R.M. College, Nagaram-522268, India
4Department of S&H, QIS College of Engg. & Tech., Ongole-523272, India
5Department of Physics, DRW College, Gudur- 524101, India
6Department of Physics, R.V. College of Engg., Bangalore - 560059, India
7Department of Physics, Govt. College for Men, Cuddapah – 516001, India
M.C. Rao et al /Int.J. Chemical Concepts. 2018,4(1),pp 18-22.
Abstract
Semiconducting tin oxide thin films with suitable catalysts in the form of nanoparticles,
overlayers and clusters are known to exhibit enhanced sensitivity, better selectivity and fast response
speeds to various reducing gases. SnO2 sensor is invariably anion deficient and oxygen vacancies are
mainly responsible for making available free electrons for the conduction process. Fe3+ doped tin oxide
thin films were prepared by chemical spray pyrolysis. The prepared thin films were characterized by
electrical, gas sensing and thermo emf. The thermo emf of Fe3+ doped SnO2 thin films increased with
the increasing of temperature. At low temperatures the Seebeck coefficient is observed to be high and
the Seebeck coefficient decreases with increasing of temperature. The large values of thermoelectric
power of Fe3+ doped SnO2 thin films are typical of semiconductor behavior.
Keywords
SnO2, Thin films, Spray pyrolysis, Electrical, Gas Sensing and Thermo emf.
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